JPS6244848B2 - - Google Patents

Info

Publication number
JPS6244848B2
JPS6244848B2 JP56194576A JP19457681A JPS6244848B2 JP S6244848 B2 JPS6244848 B2 JP S6244848B2 JP 56194576 A JP56194576 A JP 56194576A JP 19457681 A JP19457681 A JP 19457681A JP S6244848 B2 JPS6244848 B2 JP S6244848B2
Authority
JP
Japan
Prior art keywords
wafer
temperature
light irradiation
auxiliary heating
outer periphery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56194576A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58175826A (ja
Inventor
Yoshiki Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Priority to JP19457681A priority Critical patent/JPS58175826A/ja
Priority to US06/445,492 priority patent/US4468259A/en
Publication of JPS58175826A publication Critical patent/JPS58175826A/ja
Publication of JPS6244848B2 publication Critical patent/JPS6244848B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP19457681A 1981-12-04 1981-12-04 半導体を光照射で加熱する方法 Granted JPS58175826A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP19457681A JPS58175826A (ja) 1981-12-04 1981-12-04 半導体を光照射で加熱する方法
US06/445,492 US4468259A (en) 1981-12-04 1982-11-30 Uniform wafer heating by controlling light source and circumferential heating of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19457681A JPS58175826A (ja) 1981-12-04 1981-12-04 半導体を光照射で加熱する方法

Publications (2)

Publication Number Publication Date
JPS58175826A JPS58175826A (ja) 1983-10-15
JPS6244848B2 true JPS6244848B2 (en]) 1987-09-22

Family

ID=16326829

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19457681A Granted JPS58175826A (ja) 1981-12-04 1981-12-04 半導体を光照射で加熱する方法

Country Status (1)

Country Link
JP (1) JPS58175826A (en])

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH039351U (en]) * 1989-06-12 1991-01-29
JP2010034288A (ja) * 2008-07-29 2010-02-12 Sumco Corp シリコンウェーハの熱処理方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593935A (ja) * 1982-06-30 1984-01-10 Ushio Inc 半導体ウエハ−を光照射で加熱する方法
JPS593921A (ja) * 1982-06-30 1984-01-10 Ushio Inc 半導体ウエハ−を光照射で加熱する方法
JPS5998518A (ja) * 1982-11-26 1984-06-06 Seiko Epson Corp ランプ・アニ−ル装置
JPS59112938U (ja) * 1983-01-20 1984-07-30 日本電信電話株式会社 板状試料均一加熱用治具
JPS6088431A (ja) * 1983-10-20 1985-05-18 Ushio Inc 光照射加熱方法
JPS60137027A (ja) * 1983-12-26 1985-07-20 Ushio Inc 光照射加熱方法
JPS60137026A (ja) * 1983-12-26 1985-07-20 Ushio Inc 光照射加熱方法
JPH0611033B2 (ja) * 1984-10-04 1994-02-09 松下電器産業株式会社 気相成長容器
JPS62128525A (ja) * 1985-11-29 1987-06-10 Matsushita Electric Ind Co Ltd 化合物半導体基板のアニ−ル方法
US5310339A (en) * 1990-09-26 1994-05-10 Tokyo Electron Limited Heat treatment apparatus having a wafer boat

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52158203U (en]) * 1976-05-26 1977-12-01

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH039351U (en]) * 1989-06-12 1991-01-29
JP2010034288A (ja) * 2008-07-29 2010-02-12 Sumco Corp シリコンウェーハの熱処理方法

Also Published As

Publication number Publication date
JPS58175826A (ja) 1983-10-15

Similar Documents

Publication Publication Date Title
US5336641A (en) Rapid thermal annealing using thermally conductive overcoat
US4535228A (en) Heater assembly and a heat-treatment method of semiconductor wafer using the same
JPS58223320A (ja) 不純物拡散方法
JPS6244848B2 (en])
US4469529A (en) Method for heating semiconductor wafer by means of application of radiated light with supplemental circumferential heating
US4468259A (en) Uniform wafer heating by controlling light source and circumferential heating of wafer
JPS5939031A (ja) フオスフオシリケ−トガラスをリフロ−するための方法
US4535227A (en) Method for heating semiconductor wafer by means of application of radiated light
US4504730A (en) Method for heating semiconductor wafer by means of application of radiated light
JPH09237789A (ja) 遮蔽体および熱処理装置および熱処理方法
JPS5917253A (ja) 半導体ウエハの熱処理方法
JPS6331096B2 (en])
JPS6331094B2 (en])
JPS6244847B2 (en])
JPH057860B2 (en])
JPH025295B2 (en])
JP2758770B2 (ja) 半導体基板熱処理用治具
JPS593934A (ja) 半導体ウエハ−を光照射で加熱する方法
JPS63257221A (ja) ランプアニ−ル装置
JPS59121832A (ja) 半導体ウエハ−を光照射で加熱する方法
JPH0240480Y2 (en])
JPS6088431A (ja) 光照射加熱方法
JPS6088432A (ja) ウエハ−のアニ−ル方法
JPS593933A (ja) 半導体ウエハ−を光照射で加熱する方法
JPH02185037A (ja) 短時間熱処理装置